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Zetex Semiconductors |
NPN SILICON POWER (SWITCHING) TRANSISTOR FCX688B C * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail - FCX789A 688 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector- |
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Zetex Semiconductors |
PNP SILICON POWER (SWITCHING) TRANSISTOR FCX1149A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance; RCE(sat)67mat 3A 149 E C B Partmarking Detail |
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Zetex Semiconductors |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA APPLICATIONS * Telephone dialler circuits * Hook switches for modems * Predrivers within HID lamp ballasts * (SLIC) Subscriber Line Interface Cards Pa |
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Zetex Semiconductors |
NPN SILICON POWER TRANSISTOR FCX1051A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 17mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 57mΩ at 3A FCX1151A 051 E C B Complimen |
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Zetex Semiconductors |
PNP SILICON POWER (SWITCHING) TRANSISTOR FCX1147A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 53mΩ at 3A FCX1047A 147 E C B Complimen |
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Zetex Semiconductors |
PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR µ A I C=-10mA* I E=-100 µ A V CB=-30V V CES =-30V V EB=-4V I C=-1A, I B=-100mA* I C=-2A, I B=-200mA* I C=-1A, I B=-100mA* I C =-1A, V CE=-2V* I C=-1mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* I C=-2A, V CE=-2V* MHz pF I C=-100mA, V CE=-5V |
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Zetex Semiconductors |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR er Cut-Off Current Saturation Voltages Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) VB |
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Zetex Semiconductors |
NPN SILICON POWER (SWITCHING) TRANSISTOR FCX617 C * * * * * 2W POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A E C B Partmarking Detail - 617 |
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Zetex Semiconductors |
PNP SILICON POWER (SWITCHING) TRANSISTOR FCX717 * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 12mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 77m at 3A Partmarking Detail - 717 ABSOLUT |
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Zetex Semiconductors |
PNP SILICON POWER (SWITCHING) TRANSISTOR FCX718 C * * * * * 2W POWER DISSIPATION 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 96mΩ at 2.5A E C B Partmarking Detail - 718 |
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Desde 2024. D4U Semiconductor.
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