Zetex Semiconductors 830 Hoja de datos

No.	parte #	Fabricante	Descripción
1	830	Zetex Semiconductors	SILICON 28V HYPERABRUPT VARACTOR DIODES · Close tolerance C-V characteristics · High tuning ratio · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile ra
2	830B	Zetex Semiconductors	SILICON 28V HYPERABRUPT VARACTOR DIODES · Close tolerance C-V characteristics · High tuning ratio · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile ra
3	830A	Zetex Semiconductors	SILICON 28V HYPERABRUPT VARACTOR DIODES · Close tolerance C-V characteristics · High tuning ratio · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile ra
4	ZC830	Zetex Semiconductors	SOT23 SILICON VARIABLE CAPACITANCE DIODES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current Power Dissipation at T
5	ZC830A	Zetex Semiconductors	SOT23 SILICON VARIABLE CAPACITANCE DIODES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current Power Dissipation at T
6	ZC830B	Zetex Semiconductors	SOT23 SILICON VARIABLE CAPACITANCE DIODES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current Power Dissipation at T