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ZPSEMI |
N-Channel Enhancement Mode MOSFET 30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. N-Channel Enhancement Mo |
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ZPSEMI |
NPN Transistor z High DC Current Gain z Ultra Low Collector-Emitter Saturation Voltage MARKING: 303NL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas |
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ZPSEMI |
N-Channel MOSFET z Lead free product is acquired z Surface mount package SOT-23 1. GATE 2. SOURCE 3. DRAIN APPLICATION z Load Switch and in PWM applications MARKING: R2 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Vol |
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ZPSEMI |
N-Channel MOSFET z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATION z Load/Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics |
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ZPSEMI |
Dual N-Channel MOSFET Lead Free Product is Acquired Surface Mount Package N-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive Equivalent to Two CJ3134K APPLICATION Load/Power Switching Interfacing Switching Battery Management for Ultra |
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ZPSEMI |
P-Channel MOSFET z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATION z Load/Power Switching z Interfacing, Logic Switching z Battery Management for Ultra Small Portable Elect |
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ZPSEMI |
Dual P-Channel Power MOSFET z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phon |
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ZPSEMI |
P-Channel Enhancement Mode MOSFET -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package P-Channel Enhancement |
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ZPSEMI |
N-Channel Enhancement Mode Field Effect Transistor |
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ZPSEMI |
PNP Transistor z Small Flat Package z High DC Current Gain z Ultra Low Collector-Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MARKING:303PL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collecto |
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ZPSEMI |
N-Channel Enhancement Mode Field Effect Transistor z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0A SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-So |
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ZPSEMI |
P-Channel Enhancement Mode Field Effect Transistor z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1. GATE 2. SOURCE 3. DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Volta |
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Desde 2024. D4U Semiconductor.
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