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IXYS |
Schottky Rectifier |
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IXYS |
Schottky Rectifier |
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SURFACE MOUNT RECTIFIER |
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LCD-Displays ltage ”H” Input Voltage ”L” Output Voltage ”H” Output Voltage ”L” Iee Vdd-Vee VIH VIL VOH VOL Block Diagramm 0.8 Vdd – Mechanische Abmessung Grabenmattenstr. 11 www.ese.ch CH-5608 Stetten Tel. +41(0)56 610 46 21 Fax +41(0)56 610 44 91 info@ese |
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IXYS |
Gallium Arsenide Schottky Rectifier • Low forward voltage • Very high switching speed • Low junc |
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IXYS |
Gallium Arsenide Schottky Rectifier |
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SURFACE MOUNT RECTIFIER |
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SURFACE MOUNT RECTIFIER |
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SURFACE MOUNT RECTIFIER |
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SURFACE MOUNT RECTIFIER |
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SURFACE MOUNT RECTIFIER |
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SURFACE MOUNT RECTIFIER |
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IXYS Corporation |
Gallium Arsenide Schottky Rectifier GaAs Schottky Diode with Enhanced Barrier Height: • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junction capacity of GaAs diode independent from temperature - short and low rever |
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IXYS Corporation |
Gallium Arsenide Schottky Rectifier Low forward voltage Very high switching speed – low IRM, trr values Soft reverse recovery Temperature independent switching behaviour High temperature operation capability Applications Switched mode power supplies (SMPS) High frequency converters Res |
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IXYS Corporation |
Gallium Arsenide Schottky Rectifier Low forward voltage Very high switching speed – low IRM, trr values Soft reverse recovery Temperature independent switching behaviour High temperature operation capability Applications Switched mode power supplies (SMPS) High frequency converters Res |
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IXYS Corporation |
Gallium Arsenide Schottky Rectifier ● ● TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine 11 8 20 -55...+175 -55...+150 ● ● ● ● ● TC = 25°C mounting torque (TO-220) Conditions TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 5 A; IF = 5 A; TVJ = 125°C TVJ = 25°C 34 |
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IXYS Corporation |
Gallium Arsenide Schottky Rectifier Second generation Conditions Maximum Ratings 180 TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Conditions IF = 7.5 A; IF = 7.5 A; VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C 24 15 80 34 V A A A W Characteristic Val |
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IXYS |
Gallium Arsenide Schottky Rectifier • Low forward voltage • Very high switching speed • Low junc |
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IXYS |
Gallium Arsenide Schottky Rectifier |
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TRSYS |
SURFACE MOUNT RECTIFIER |
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Desde 2024. D4U Semiconductor.
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