| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET include high gain and a thermally-enhanced, surface-mount package. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-SON-16 Peak/Average Ratio, Gain |
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Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSO |
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Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak |
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Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz, 3GP |
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Desde 2024. D4U Semiconductor.
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