Wolfspeed E3M Hoja de datos

No.	parte #	Fabricante	Descripción
1	E3M0032120K	Wolfspeed	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi
2	E3M0060065K	Wolfspeed	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi
3	E3M0016120K	Wolfspeed	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi
4	E3M0045065K	Wolfspeed	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi
5	E3M0021120K	Wolfspeed	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi
6	E3M0060065D	Wolfspeed	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Quali