| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate { ▲ ● ● { 3. S |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 42nC (Typ.) □ BVDSS=600V,ID=12A □ RDS(on) :0.7 Ω (Max) @VG=10V □ 100% Avalanche Tested GD S G! D ! ● ◀▲ ● ● ! S |
|
|
|
|
Wisdom technologies |
HIGH VOLTAGE N-Channel MOSFET □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D G S TO‐220F |
|
|
|
|
Wisdom technologies |
HIGH VOLTAGE N-Channel MOSFET □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (Max) @VG=10V □ 100% Avalanche Tested GD S G! D ! ● ◀▲ ● ● ! S |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 25nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C) ● 1. Gate { ▲ ● ● { 3. Sou |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ RDS(on) (Max 1.4 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced pl |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ RDS(on) (Max 5.0 Ω )@VGS=10V ■ Gate Charge (Typical 15.0nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 33nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.73 Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D G S TO‐220F |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 5nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 11.5Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D ! G! ● ◀▲ ● ● ! S |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 0.85 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C) ● 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 0.55 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C) ● 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 0.95 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 25nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C) ● 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 0.18 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 45nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C) ● 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ ■ RDS(on) (Max 0.45 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 29nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.DataSheet4U.com ■ Maximum Junction Temperature Range (150°C) ● 1. Gate { ▲ ● ● { 3. So |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced pl |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced pl |
|
|
|
|
Wisdom technologies |
N-Channel MOSFET ■ RDS(on) (Max 1.6 Ω )@VGS=10V ■ Gate Charge (Typical 39nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced pl |
|
Desde 2024. D4U Semiconductor.
|