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NPN Silicon Power Transistor aturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VCEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT ton tstg tF IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=1A V |
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PNP Epitaxial Silicon Transistor duct BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT IC=-100uA, IE=0 IC=-1mA, IB=0 IC=-100uA, IC=0 VEB=-60V,IC=0 VEB=-5V,IC=0 VCE=-2V,IC=-1.0A IC=-2.0A,IB=-0.2A IC=-2.0A,IB=-0.2A VCB=-10V, f=1MHz VCE=-2V,IC=-0.5A * Pulse Test : Pulse Widt |
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PNP Epitaxial Silicon Transistor ct BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)1 Cob fT IC=-100uA, IE=0 IC=-1mA, IB=0 IC=-100uA, IC=0 VEB=-40V,IC=0 VEB=-5V,IC=0 VCE=-2V,IC=-0.5A VCE=-1V,IC=-3.0A IC=-4.0A,IB=-0.4A IC=-3.0A,IB=-0.15A IC=-4.0A,IB=-0.4 |
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NPN Silicon Power Transistor n hFE1 hFE2 VCE=5V,IC=10mA VCE=3V,IC=0.8A *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VCE(sat) VBE(sat) fT tstg tf IC |
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NPN Silicon Power Transistor Output Capacitance Current Gain Bandwidth Product Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% SYMBOL VCEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tstg tF Test Condition IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=1A VCE=5V,IC=2A |
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Desde 2024. D4U Semiconductor.
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