Wing On PFZ Hoja de datos

No.	parte #	Fabricante	Descripción	Hoja de Datos
1	PFZ20N50E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (T