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WillSEMI |
Small Power TVS Stand-off voltag |
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WillSEMI |
Small Power TVS Stand-off voltage: 5V Max. Transient protection for each line according to IEC61000-4-2 (ESD): ±30k |
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WillSEMI |
Small Power TVS DFN2510-10L (Bottom view) NC NC GND NC NC 10 9 8 7 6 1234 5 I/O1 I/O2 GND I/O3 I/O4 12 45 3, 8 Pin configuration (Top view) Stand-off |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: 7.5V ~ 15V Surge protection according to IEC61000-4-5 8/20μs waveform: IPPM see Table 4 Surge protection according to IEC61643-321 10/1000μs waveform: IPPM see Table 4 Low clamping voltage Solid-state silic |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: 5V max. Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-5 (surge): 25A (8/20μ |
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WillSEMI |
Small Power TVS DFN1006-2L (Bottom View) Circuit diagram Stand-off voltage: ±3.3V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 10A (8/20μs) Capacitanc |
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WillSEMI |
Small Power TVS DFN2510-10L (Bottom view) NC NC GND NC NC 10 9 8 7 6 1234 5 I/O1 I/O2 GND I/O3 I/O4 12 45 3, 8 Pin configuration (Top view) Stand-off voltage |
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WillSEMI |
Small Power TVS |
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WillSEMI |
Small Power TVS Stand-off voltage: 24V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±20kV (contact discharge) IEC61000-4-5 (surge): 3.0A (8/20μs) Capacitance: CJ = 14.2pF typ. Ultra-low leakage current: IR = 0.1nA typ. Low clampi |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: 5V max. Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-5 (surge): 6A (8/20μs) |
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WillSEMI |
Small Power TVS Stand-off voltage: 5V max. Transient protection for each line according to IEC61000-4-2 |
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WillSEMI |
Small Power TVS Stand-off voltage: 5V max. Transient protection f |
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WillSEMI |
Small Power TVS Stand-off voltage: 5V Max Transient protection for each line according to IEC61000-4-2 ( |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: ±5V Max. Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 8A (8/20μs) Capacitance: CJ = 17.5pF typ. Low lea |
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WillSEMI |
Small Power TVS Circuit diagram Reverse stand-off voltage: ±5V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 8A (8/20μs) Capacit |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: ±5V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 8A (8/20μs) Capacitance: CJ = 17.5pF typ. Low leak |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: 4.5V ~ 15V Surge protection according to IEC61000-4-5 see Table 4 ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge) Low clamping voltage Solid-state silicon technology Applications Powe |
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WillSEMI |
Small Power TVS Reverse stand-off voltage: 5V ~ 15V Surge protection according to IEC61000-4-5 see Table 4 ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge) Low clamping voltage Solid-state silicon technology Applications Power |
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WillSEMI |
Small Power TVS Stand-off voltage: 7V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-5 (surge): 6 A (8/20μs) Capacitance: CJ = 17.5pF typ. Ultra-low leakage current: IR |
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WillSEMI |
Small Power TVS Stand-off voltage: ±5.5V Max. Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-5 (surge): 13A (8/20μs) Low c |
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Desde 2024. D4U Semiconductor.
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