White Electronic EDI Hoja de datos

No.	parte #	Fabricante	Descripción
1	EDI8L24129V	White Electronic	128Kx24 SRAM 3.3 Volt 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10, 12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs • Fully Static, No Clocks Surface Mount Package • 119 Lead BGA (JEDEC MO-163), No. 3
2	EDI7F331MV	White Electronic Designs	1Mx32 FLASH MODULE      1Mx32 and 2x1Mx32 Densities Based on AMD - AM29LV008T Flash Device Fast Read Access Time - 80ns 3.3V Only Reprogramming Flexible, Sector Architecture       One 16Kbyte, two 8Kbyte, one 32Kbyte and ﬁfteen 64Kbyte sectors Any combinat
3	EDI2GG464128V	White Electronic	4MB SYNCHRONOUS CARD EDGE DIMM 4x128Kx64 Synchronous Access Speed(s): TKHQV = 9.5, 10, 11, 12, 15ns Flow-Through Architecture Clock Controlled Registered Bank Enables (E1#, E2#, E3#, E4#) Clock Controlled Registered Address Clock Controlled Registered Global Write (GW#) Aysnchrono
4	EDI7F2331MV	White Electronic Designs	1Mx32 FLASH MODULE      1Mx32 and 2x1Mx32 Densities Based on AMD - AM29LV008T Flash Device Fast Read Access Time - 80ns 3.3V Only Reprogramming Flexible, Sector Architecture       One 16Kbyte, two 8Kbyte, one 32Kbyte and ﬁfteen 64Kbyte sectors Any combinat
5	EDI7F233512V	White Electronic Designs	512Kx32 FLASH 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and seven 64Kbyte sectors Any combination of sect
6	EDI7F2341MC	White Electronic Designs	1Mx32 FLASH MODULE n n n n n 1Mx32 and 2x1Mx32 Densities Based on Intel's E28F008SA Flash Device Fast Read Access Time - 90ns 5V-Only Reprogamming or 12V Reprogram. Low Power Dissipation n n n n n n n 60mA per Device Active Current 10µA per Device CMOS Standby Current
7	EDI7F2342MC	White Electronic Designs	2Mx32 FLASH MODULE  2Mx32 and 2x2Mx32 Densities  Based on Intel's E28F016S5 Flash Device  Fast Read Access Time - 90ns  5V - Only Reprogramming  12V VPP Production Programming  Low Power Dissipation  35mA per Device Active Write Current  25µA per Device CMOS St
8	EDI7F492MC	White Electronic Designs	(EDI7F292MC / EDI7F492MC) Boot-Only Sector Erase Flash Memory 5.0 Volt ± 10% ﬁr read and write operations • Minimizes system level power requirements Compatible with JEDEC-standards • Pinout and software compatible with single-power supply Flash • Superior inadvertent write protection 80 SIMM (JEDEC) Minimum 10
9	EDI7F332MV	White Electronic Designs	2Mx32 FLASH MODULE 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29LV017B Flash Device Fast Read Access Time - 90ns 3.3V-Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Supports full chip erase Sect
10	EDI7F33512V	White Electronic Designs	512Kx32 FLASH 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and seven 64Kbyte sectors Any combination of sect
11	EDI7F4341MC	White Electronic Designs	4x1Mx32 FLASH MODULE n 4x1Mx32 n Based on Intel's E28F008SA Flash Device n Fast Read Access Time - 90ns n 5- Volt-Only Reprogramming n Low Power Dissipation 60mA per Device Active Current 10µA per Device CMOS Standby Current n Typical Endurance >100,000 Cycles n Sing
12	EDI7F4341MV	White Electronic Designs	4x1Mx32 FLASH MODULE  4 x1Mx32  Based on Intel's E28F008S3 Flash Device  Fast Read Access Time - 120ns  Flexible Smart Voltage      2.7-3.6V Program Erase 2.7-3.6V Read Operation 12Vpp Fast Production Programming 30mA per Device Active Current 20A per Device CMO
13	EDI7F4342MC	White Electronic Designs	4x2Mx32 FLASH MODULE n n n n n 4x2Mx32 Based on Sharp's LH28F016SU Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming Low Power Dissipation n n n n n n n 60mA per Device Active Current 10µA per Device CMOS Standby Current EDI7F4342MC DESCRIPTION The EDI7F4
14	EDI2CG472128V	White Electronic	4 Megabyte Sync/Sync Burst 4x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable (EM#) Clock Controlled Registered Bank Enables (E1#, E2#, E3#, E4#) Clock Controlled Byte Wr
15	EDI2DL32256V	White Electronic	256Kx32 Synchronous Pipline Burst SRAM s tKHQV times of 3.5, 3.8 and 4.0ns s 166, 150 and 133 MHz clock speed s DSP Memory Solution • Texas Instruments’ TMS320C6201 • Texas Instruments’ TMS320C67x s Package: • 119 pin BGA, JEDEC MO-163 s 3.3V Operating Supply Voltage s 3.5ns Output Enable
16	EDI7F2331MC	White Electronic Designs Corporation	1Mx32 FLASH MODULE      1Mx32 and 2x1Mx32 Densities Based on AMD - AM29F080 Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming Sector Erase Architecture       Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Also suppor
17	EDI88257C	White Electronic Designs	256K x 8 Monolithic SRAM 256Kx8 CMOS Static Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function (LP Versions) • TTL Compatible Inputs and Outputs • Fully Static, No Clocks JEDEC Approved Pinout • 32 pin Ceramic DIP, 0.6 mils wide (Package 9) ■ Sing
18	EDI7F2332MV	White Electronic Designs	2Mx32 FLASH MODULE 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29LV017B Flash Device Fast Read Access Time - 90ns 3.3V-Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Supports full chip erase Sect
19	EDI7F331MC	White Electronic Designs	1Mx32 FLASH MODULE      1Mx32 and 2x1Mx32 Densities Based on AMD - AM29F080 Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming Sector Erase Architecture       Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Also suppor
20	EDI7F332MC	White Electronic Designs	2Mx32 FLASH MODULE n n n n n 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29F016 Flash Device Fast Read Access Time - 90ns 5V-Only Reprogamming Sector Erase Architecture n n n n n Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Also supports