| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Weitron Technology |
Surface Mount Dual N-Channel MOSFET *Super high dense cell design for low RDS(ON) RDS(ON)<26mΩ @VGS = 10V RDS(ON)<40mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Sour |
|
|
|
|
Weitron Technology |
N AND P-Channel POWER MOSFET * Low Gate change * Low On-Resistance N-CH RDS(ON)<42mΩ@VGS = 4.5V P-CH RDS(ON)<90mΩ@VGS = -4.5V * SOP-8 Package 4 GATE 1 SOURCE 5,6 DRAIN 3 SOURCE 1 SOP-8 Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage www.Data |
|
|
|
|
Weitron Technology |
Surface Mount N-Channel MOSFET *Low On-Resistance *High Vgs Max Rating Voltage *Surface Mount Package Absolute Maximum Ratings www.DataSheet4U.com Parameter Symbol VDS VGS Ratings 30 ±20 13.8 11 50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Drain-Source Voltage Gate-Source Vol |
|
|
|
|
Weitron Technology |
Surface Mount P-Channel MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching 1 SOP-8 Description: The WTK4435 provide the designer with the be |
|
|
|
|
Weitron Technology |
Surface Mount P-Channel MOSFET * Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching -30 VOLTAGE 1 Description: The WTK6679 provide the designer with the best com |
|
|
|
|
Weitron Technology |
Surface Mount N-Channel MOSFET *Low On-Resistance *High Vgs Max Rating Voltage *Surface Mount Package Absolute Maximum Ratings www.DataSheet4U.com Parameter Symbol VDS VGS Ratings 30 ±20 11.5 9.5 50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Drain-Source Voltage Gate-Source Vo |
|
|
|
|
Weitron Technology |
Surface Mount N-Channel MOSFET * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON) RDS(ON)<5.5mΩ@VGS=10V RDS(ON)<6.2mΩ@VGS=4.5V RDS(ON)<8.0mΩ@VGS=2.5V * Rugged and Reliable. * SOP-8 Package. 1 SOP-8 Maximum Ratings |
|
|
|
|
Weitron Technology |
Surface Mount P-Channel MOSFET * Super high dense * Cell design for low RDS(ON) * RDS(ON)<130mΩ@V GS = -4.5V * RDS(ON)<180mΩ@V GS = -2.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching D G 4 5 1 Description: SOP-8 The WTK9431 provide the designer with t |
|
|
|
|
Weitron Technology |
Surface Mount P-Channel MOSFET D G 4 5 * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching 1 Description: The WTK9435 provide the designer with the best comb |
|
|
|
|
Weitron Technology |
Surface Mount Dual N-Channel MOSFET *Super high dense cell design for low RDS(ON) RDS(ON)<50mΩ @VGS = 10V RDS(ON)<60mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Sour |
|
|
|
|
Weitron Technology |
Surface Mount Dual N-Channel Enhancement Mode POWER MOSFET *Super high dense cell design for low RDS(ON) RDS(ON)<14mΩ @VGS = 10V RDS(ON)<20mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Sour |
|
Desde 2024. D4U Semiconductor.
|