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Weitron Technology |
NPN General Purpose Transistors t Gain www.DataSheet4U.com (IC= 1mAdc, VCE=5Vdc) HFE VCE(sat) 60 1000 - Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Transition Frequency (IC= 10 mAdc, VCE= 5 Vdc, f=3 |
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Weitron Technology |
PNP General Purpose Transistors erwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) www.DataSheet4U.com (IC= -500 mAdc, VCE= -1Vdc) hFE(1) hFE(2) 64 40 300 - - Collector-Emitter Saturation V |
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Weitron Technology |
NPN Transistor 0uA h EF , DC CURRENT GAIN I B =140uA V CE =1V 100 10 20 30 40 50 1 1 10 100 1000 10000 VCE , COLLECTOR-EMITTER VOLTAGE(VoLTS) Figure1. Static Characteristic IC ,COLLECTOR CURRENT(mA) Figure2. DC current Gain VBE (sat),VCE (sat), SAT |
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Weitron Technology |
PNP General Purpose Transistors nit On Characteristics DC Current Gain (IC= -1mAdc, VCE=-5Vdc) Collector-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10 mAdc) Base-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10mAdc) Transition Frequency (IC= -10 mAdc, VCE= -5 Vdc, f=30MHz) |
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Weitron Technology |
PNP Transistor uA -20 IB=-100uA IB=-50uA -10 0 0 -10 -20 -30 -40 -50 VCE , COLLECTOR-EMITTER VOLTAGE (VoLTS) Figure 1. St atic Characteristic -1000 V BE(sat) -100 VCE (sat) -10 10 IC=10I B 100 1000 IC , COLLECTOR CURRENT (mA) Fig ure 3. Base-Emitter Saturatio |
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Weitron Technology |
NPN Transistor =40uA I B =20uA h EF , DC CURRENT GAIN I B =140uA V CE =1V 100 10 20 30 40 50 1 1 10 100 1000 10000 VCE , COLLECTOR-EMITTER VOLTAGE(VoLTS) FIG.1 Static Characteristic IC ,COLLECTOR CURRENT(mA) FIG.2 DC current Gain VBE (sat),VCE (sat |
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Weitron Technology |
PNP Transistor 14 -16 -18 -20 -10 -0.1 -1 -10 -100 -1000 VCE , COLLECTOR-EMITTER VOLTAGE(VOLTS) Figure1. Static Characteristic IC ,COLLECTOR CURRENT(mA) Figure2. DC current Gain VBE (sat),VCE (sat), SATURATION VOLTAGE(mV) fT, CURRENT GAIN BANDWIDTH PRODUCT |
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Desde 2024. D4U Semiconductor.
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