| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Weitron Technology |
High Voltage PNP Transistors U.com www.DataSheet4U.com MPSA94 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE=-10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (I |
|
|
|
|
Weitron Technology |
PNP General Purpose Transistors dc, VEB (0ff)= -0.5Vdc) Collector Cutoff Current (VCB= -50 Vdc, IE=0) (VCB= -50Vdc, IE=0, TA=125 C) MPS2907 MPS2907A MPS2907 MPS2907A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB -40 -60 -60 -5.0 -50 -0.020 -0.010 -20 -10 -50 Vdc Vdc Vdc nAdc nAdc Base |
|
|
|
|
Weitron Technology |
High-Voltage NPN Transistors racteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 100 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAd |
|
|
|
|
Weitron Technology |
NPN General Purpose Transistors A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A V B E (s at) SMALL-SIGNAL CHARACTERISTICS C urrent-G ain-B andwidth P roduct (4) (I C =20 mAdc, V C E =20 V dc, f=100MHz) Output C apacitance (V C B =10 V dc, I E =0, f=1.0MHz) Input |
|
|
|
|
Weitron Technology |
Plastic-Encapsulate Transistros NPN Darlington Transistor 00 20000 1.5 2.0 Collector-emitter saturation voltage1 IC=100mA,IB=0.1mA VCE=5V,IC=10mA Base-emitter voltage1 Transition frequency VCE=5V,IC=10mA,F=100Mhz fT 125 - Note: 1.Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. http://www.weitron.c |
|
|
|
|
Weitron Technology |
(MPSA05 / MPSA06) Driver NPN Transistors WEITRON http://www.weitron.com.tw www.DataSheet4U.com MPSA05 MPSA06 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= 100 mAdc, VCE=1.0 Vdc) C |
|
|
|
|
Weitron Technology |
(MPSA05 / MPSA06) Driver NPN Transistors WEITRON http://www.weitron.com.tw www.DataSheet4U.com MPSA05 MPSA06 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= 100 mAdc, VCE=1.0 Vdc) C |
|
|
|
|
Weitron Technology |
PNP General Purpose Transistors dc, VEB (0ff)= -0.5Vdc) Collector Cutoff Current (VCB= -50 Vdc, IE=0) (VCB= -50Vdc, IE=0, TA=125 C) MPS2907 MPS2907A MPS2907 MPS2907A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB -40 -60 -60 -5.0 -50 -0.020 -0.010 -20 -10 -50 Vdc Vdc Vdc nAdc nAdc Base |
|
|
|
|
Weitron Technology |
Plastic-Encapsulate Transistros NPN Darlington Transistor 00 20000 1.5 2.0 Collector-emitter saturation voltage1 IC=100mA,IB=0.1mA VCE=5V,IC=10mA Base-emitter voltage1 Transition frequency VCE=5V,IC=10mA,F=100Mhz fT 125 - Note: 1.Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. http://www.weitron.c |
|
|
|
|
Weitron Technology |
NPN General Purpose Transistors A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A V B E (s at) SMALL-SIGNAL CHARACTERISTICS C urrent-G ain-B andwidth P roduct (4) (I C =20 mAdc, V C E =20 V dc, f=100MHz) Output C apacitance (V C B =10 V dc, I E =0, f=1.0MHz) Input |
|
Desde 2024. D4U Semiconductor.
|