WeEn WMS Hoja de datos

No.	parte #	Fabricante	Descripción
1	WMS30N020V	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • 100% UIS Tested • RoHS Compliant and Halogen Fre
2	WMS30N045S	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • 100% UIS Tested • RoHS Compliant, Halogen Free
3	WMS30N250E	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • 100% UIS Tested • RoHS Compliant, Halogen Free a
4	WMS20N270SE	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • 100% UIS Tested • RoHS Compliant, Halogen Free a
5	WMS20N270SK	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • RoHS Compliant, Halogen Free and Lead Free 3. A
6	WMSC030H12B1P	WeEn	N-Channel Silicon Carbide MOSFET Module and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design 3. Applications • Power inverters • AC-DC converters • DC-DC converters • Active power factor correctors • Mot
7	WMSC040H12B1P	WeEn	N-Channel Silicon Carbide MOSFET Module and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design 3. Applications • Power inverters • AC-DC converters • DC-DC converters • Active power factor correctors • Mot
8	WMSC010H12B1P	WeEn	N-Channel Silicon Carbide MOSFET Module and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design 3. Applications • Power inverters • AC-DC converters • DC-DC converters • Active power factor correctors • Mot
9	WMSC020H12B1P	WeEn	N-Channel Silicon Carbide MOSFET Module and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design 3. Applications • Power inverters • AC-DC converters • DC-DC converters • Active power factor correctors • Mot
10	WMS30N050S	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • 100% UIS Tested • RoHS Compliant and Halogen Fre
11	WMS30N420K	WeEn	N-Channel Silicon MOSFET and benefits • Advance High Cell Density Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Switching Losses • Optimized Gate Charge to Minimize Driver Losses • RoHS Compliant, Halogen Free and Lead Free 3. A