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4Q Triac and benefits • High current TRIAC • Low thermal resistance • High junction operating temperature capability (Tj(max) = 150 °C) • High voltage capability • Planar passivated for voltage ruggedness and reliability • Insulated tab rated at 2500 V rms 3. |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High surge capability • High Tj(max) • Isolated mounting base with 2500 V (RMS) isolation • Least sensitive gate for highest |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High surge capability • High Tj(max) • Isolated mounting base with 2500 V (RMS) iso |
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3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • Direct interfacing with low power drivers and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with sensitive gate • High voltage capability • Planar p |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High junction operating temperature capability (Tj(max) = 150 °C) • High immunity to false turn-on by dV/dt • High voltage ca |
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WeEn |
4Q Triac and benefits • High voltage capability • Least sensitive gate for highest noise immunity • High junction operating temperature capability (Tj(max) = 150 °C) • High minimum IGT for guaranteed immunity to gate noise • Planar passivated for voltage rugg |
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WeEn |
Three quadrant triacs main terminal 2 PIN CONFIGURATION mb 2 1 3 D2PAK (SOT404) SYMBOL T2 T1 G sym051 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM Repetitive peak off-state |
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Three quadrant triacs main terminal 2 PIN CONFIGURATION mb 2 1 3 D2PAK (SOT404) SYMBOL T2 T1 G sym051 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM Repetitive peak off-state |
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WeEn |
Three quadrant triacs main terminal 2 PIN CONFIGURATION mb 2 1 3 D2PAK (SOT404) SYMBOL T2 T1 G sym051 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM Repetitive peak off-state |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology with superior commutation performance for improved noise immunity • High blocking voltage capability • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Less sensi |
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WeEn |
3Q Hi-Com Triac and benefits • High current TRIAC • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability (Tj(max) = 150 |
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WeEn |
3Q Hi-Com Triac and benefits • High current TRIAC • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability (Tj(max) = 150 |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability |
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WeEn |
3Q Hi-ComTriac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High surge capability • High Tj(max) • Isolated mounting base with 2500 V (RMS) iso |
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WeEn |
3Q Hi-ComTriac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High surge capability • High Tj(max) • Isolated mounting base with 2500 V (RMS) iso |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High surge capability • High Tj(max) • Least sensitive gate for highest noise immun |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High voltage capability • Less sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and relia |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High voltage capability • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliabil |
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WeEn |
4Q Triac and benefits • High voltage capability • Least sensitive gate for highest noise immunity • High junction operating temperature capability (Tj(max) = 150 °C) • High minimum IGT for guaranteed immunity to gate noise • Planar passivated for voltage rugg |
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WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Less sen |
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Desde 2024. D4U Semiconductor.
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