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SCHOTTKY DIODES SCHOTTKY DIODES SOD-323 .,LTDMARKING: SD101AWS: S1 SD101BWS: S2 OSD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AWS SD101BW Peak Repetitive Peak reverse voltage Working Peak ICDC Bloc |
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WEJ |
NPN Transistor z High VCEO z High IC z Good hFE linearity z Low VCE (sat) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitt |
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WEJ |
SCHOTTKY DIODES SCHOTTKY DIODES SOD-323 .,LTDMARKING: SD101AWS: S1 SD101BWS: S2 OSD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AWS SD101BW Peak Repetitive Peak reverse voltage Working Peak ICDC Bloc |
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WEJ |
SCHOTTKY DIODES SCHOTTKY DIODES SOD-123 .,LTDMARKING: SD101AW: S1 SD101BW: S2 OSD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AW SD101BW Peak Repetitive Peak reverse voltage Working Peak DC Blocking V |
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WEJ |
SCHOTTKY DIODES SCHOTTKY DIODES SOD-123 .,LTDMARKING: SD101AW: S1 SD101BW: S2 OSD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AW SD101BW Peak Repetitive Peak reverse voltage Working Peak DC Blocking V |
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WEJ |
SCHOTTKY BARRIER DIODE · Low Forward Voltage Drop T · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time O.,L · Low Reverse Capacitance SOD-323 1.70 2.65 1.30 0.30 1.00 IC CMaximum Ratings @ TA = 25°C unless otherwise specified Characte |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. B |
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WEJ |
SCHOTTKY DIODES SCHOTTKY DIODES SOD-323 .,LTDMARKING: SD101AWS: S1 SD101BWS: S2 OSD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AWS SD101BW Peak Repetitive Peak reverse voltage Working Peak ICDC Bloc |
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WEJ |
SCHOTTKY DIODES SCHOTTKY DIODES SOD-123 .,LTDMARKING: SD101AW: S1 SD101BW: S2 OSD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AW SD101BW Peak Repetitive Peak reverse voltage Working Peak DC Blocking V |
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WEJ |
SCHOTTKY BARRIER DIODE · Low Forward Voltage Drop T · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time O.,L · Low Reverse Capacitance SOD-323 1.70 2.65 1.30 0.30 1.00 IC CMaximum Ratings @ TA = 25°C unless otherwise specified Characte |
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WEJ |
SCHOTTKY BARRIER DIODE · Low Forward Voltage Drop T · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time O.,L · Low Reverse Capacitance SOD-323 1.70 2.65 1.30 0.30 1.00 IC CMaximum Ratings @ TA = 25°C unless otherwise specified Characte |
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WEJ |
NPN Transistor DPower dissipation TPCM: 0.75 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A V(BR)CBO: 120 V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BSAE 123 ELECTRICAL CHARA |
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Desde 2024. D4U Semiconductor.
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