No. | parte # | Fabricante | Descripción | Hoja de Datos |
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WEJ |
NPN Transistor DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: 0.6 A Collector-base voltage V(BR)CBO: 60 V OOperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERISTI |
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WEJ |
NPN Transistor Power dissipation DPCM: 1 Collector current W (Tamb=25℃) TICM: 0.2 A Collector-base voltage 1. BASE 2. COLLECTOR 3. EMITTER .,LV(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ OELECTRICAL CHARACTERISTICS |
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WEJ |
PNP Transistor DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -40 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERIST |
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WEJ |
PNP Transistor DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.2 A Collector-base voltage V(BR)CBO: -40 V OOperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERIS |
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|
WEJ |
PNP Transistor DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERIST |
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