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WEJ |
NPN Transistor TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 45 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL |
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WEJ |
NPN TRANSISTOR 5% alumina 1.2 V JDEVICE MARKING: WEBCX20LT1=U2 2.9 1.9 0.95 0.95 0.4 CO.,LTD1. 2.4 1.3 1 . G AT E 2.SOURCER 3.DRAIE Unit:mm Test Conditions Ic=10mA Ib=0 Ic=10uA Ic=0 Veb=5V Ic=0 Vcb=20V Ie=0 Vcb=20V Ie=0 TA=150 Vce=1.0V Ic=-100mA Vce=1.0V Ic |
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WEJ |
PNP Transistor TPower dissipation PCM: .,LCollector current 0.5 ICM: -1 Collector-base voltage V(BR)CBO: -60 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECT |
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WEJ |
PNP TRANSISTOR TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 0.5 -1 -45 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICA |
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WEJ |
NPN Transistor TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 60 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL |
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WEJ |
NPN Transistor TPower dissipation PCM: .,LCollector current 0.5 ICM: 1 Collector-base voltage V(BR)CBO: 100 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTR |
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Desde 2024. D4U Semiconductor.
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