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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTR |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR aturation Voltage Vce(sat) 0.3 EBase-Emitter Saturation Voltage Vbe(sat) 1.00 Base-Emitter on Voltage Vbe(on) 0.58 0.63 o.7 LOutput Capacitance Cob 2.2 3.5 Current Gain-Bandwidth Product fT 150 270 ENoise Figure NF 10 J* Total Device Dis |
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WEJ |
NPN Transistor z High VCEO z High IC z Good hFE linearity z Low VCE (sat) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitt |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. B |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR e=0 nA Vcb= 60VIe=0 Ta=125 RCollect Cutoff Current TDC Current Gain DC Current Gain CDC Current Gain EDC Current Gain DC Current Gain LCollector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage EBase-Emitter Saturation Voltage Base-Em |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector current 0. 95¡ À0. 025 0. 35 2. 92¡ À0. 05 ICM: 0.3 Collector-base voltage A OV(BR)CBO: V(BR)CBO: 60 V 2SD780 80 V 2SD780A 1. 9 |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CELECTRI |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector current 0. 95¡ À0. 025 0. 35 2. 92¡ À0. 05 ICM: 0.3 Collector-base voltage A OV(BR)CBO: V(BR)CBO: 60 V 2SD780 80 V 2SD780A 1. 9 |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTR |
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WEJ |
NPN Transistor DPower dissipation TPCM: 0.75 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A V(BR)CBO: 120 V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BSAE 123 ELECTRICAL CHARA |
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WEJ |
NPN Transistor Power dissipation TPCM: 1.25 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 3A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 ICELECTR |
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WEJ |
NPN Transistor Power dissipation PCM: 0.2 Collector current ICM: 0.7 Collector-base voltage V(BR)CBO: 30 W (Tamb=25℃) A V SOT-23-3L 1. 9 0. 95¡ À0. 025 1. 02 TD1. BASE .,L2. EMITTER CO3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 2. 92¡ À0. 05 Oper |
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Desde 2024. D4U Semiconductor.
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