| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mosel Vitelic Corp |
256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH s 256K x 16-bit organization s Fast Page Mode for a sustained data rate of 43 MHz s RAS access time: 40, 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, and Self Refresh s Refresh Interva |
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Mosel Vitelic Corp |
256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM s 256K x 16-bit organization s Fast Page Mode for a sustained data rate of 53 MHz. s RAS access time: 30, 35, 40, 45, 50, 60 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh s Refresh Interval |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH s 256K x 16-bit organization s EDO Page Mode for a sustained data rate of 71 MHz s RAS access time: 35, 40, 45, 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, and Self Refresh s Optional |
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Mosel Vitelic Corp |
ULTRA-HIGH SPEED/ 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM s 256K x 16-bit 1.6 s Fast Page Mode for a sustained data rate of 44 MHz s RAS access time: 40, 45, 50, 60ns s Dual CAS Inputs s Low Power Dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh s Refresh Interval: 256 cycles/8 ms s |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM s 1M x 8-bit organization s Fast Page Mode for a sustained data rate of 43 MHz s RAS access time: 40, 45, 50, 60 ns s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability s Refresh Interval: 1024 cycle/16 ms s Available in 28-pin 40 |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH s 1M x 8-bit organization s EDO Page Mode for a sustained data rate of 72 MHz s RAS access time: 35, 40, 45, 50 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability s Optional Self Refresh (V53C808SH) s |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 256K x 8 EDO PAGE MODE CMOS DYNAMIC RAM s 256K x 8-bit organization s EDO Page Mode for a sustained data rate of 71 MHz s RAS access time: 35, 40, 45, 50 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability s Refresh Interval: 512 cycles/8 ms |
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Mosel Vitelic |
ULTRA-HIGH PERFORMANCE 128K x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM s 128K x 8-bit organization s RAS access time: 35, 40, 45, 50 ns s Fast Page Mode supports sustained I/O data rates up to 40 MHz s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability s Refresh Interval • V53C8126H – 512 cycles/8 ms |
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Vitelic |
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM |
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Mosel Vitelic |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH s 256K x 16-bit organization www.DataSheet4U.com s EDO Page Mode for a sustained data rate of 53 MHz (-50ns) s RAS access time: 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh s Self Refre |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH s 256K x 16-bit organization s EDO Page Mode for a sustained data rate of 100 MHz s RAS access time: 25, 30, 35, 40, 45, 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh s Optional Self Ref |
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Mosel Vitelic Corp |
3.3 VOLT 4M x 4 EDO PAGE MODE CMOS DYNAMIC RAM s 4M x 4-bit organization s EDO Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh and Hidden Refresh s Refresh Interval: 4096 cycles/64 ms |
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Mosel Vitelic Corp |
4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM s 4M x 4-bit organization s EDO Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60, 70 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh s Refresh Interval: 2048 cycles/32 ms |
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Mosel Vitelic Corp |
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM s 1M x 16-bit organization s EDO Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60, 70 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh, and Self Refresh. |
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Mosel Vitelic Corp |
4M x 4 FAST PAGE MODE CMOS DYNAMIC RAM s 4M x 4-bit organization s Fast Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh and Hidden Refresh s Refresh Interval: 4096 cycles/64 ms |
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Mosel Vitelic Corp |
4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM s 4M x 4-bit organization s EDO Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60, 70 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh s Refresh Interval: 4096 cycles/64 ms |
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Mosel Vitelic Corp |
4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM s 4M x 4-bit organization s EDO Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60, 70 ns s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh s Refresh Interval: 2048 cycles/32 ms |
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Mosel Vitelic Corp |
1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH s 1MB x 16-bit organization s EDO Page Mode for a sustained data rate of 50 MHz s RAS access time: 50, 60 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh • Refresh Interval: 1024 cycles/16 ms |
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Mosel Vitelic Corp |
ULTRA-HIGH PERFORMANCE/ 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM s 128K x 8-bit organization s RAS access time: 35, 40, 45, 50 ns s EDO Page Mode supports sustained I/O data rates up to 71.5 MHz s Low power dissipation • V53C8128H-50 — Operating Current – 135 mA max — TTL Standby Current – 2.0 mA max s Low CMOS St |
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Desde 2024. D4U Semiconductor.
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