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Vishay |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 17° • Low forward voltage • Good spectral matching |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for |
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Vishay |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • Narrow angle of half intensity: ϕ = ± 3° • Suitable for hig |
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Vishay |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • High speed • High radiant power • Low forward voltage • Suitable for high pulse current operation • Angle of half intensity: ϕ = ± 22° • Peak wavelength: λp = 940 nm • Goo |
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Vishay |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • High speed • High radiant power • Low forward voltage • Suitable for high pulse current operation • Angle of half intensity: ϕ = ± 22° • Peak wavelength: λp = 940 nm • Goo |
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Vishay |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: TELUX • Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity, vertical: ϕv = ± 18° • Angle of |
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Desde 2024. D4U Semiconductor.
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