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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TMBS® DO-201AD |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation DO-204AC (DO-15) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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Vishay |
Photovoltaic Solar Cell Protection Schottky Rectifier • Trench MOS Schottky technology Photovoltaic Solar Cell Protection Schottky Rectifier TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • ESD capability P600 • Solder dip 275 °C max |
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Vishay |
Photovoltaic Solar Cell Protection Schottky Rectifier • Trench MOS Schottky technology TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 • Compliant to RoHS Directive 2002/95/EC and in |
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Vishay |
Photovoltaic Solar Cell Protection Schottky Rectifier • Trench MOS Schottky technology TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 • Compliant to RoHS Directive 2002/95/EC and in |
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Vishay |
Photovoltaic Solar Cell Protection Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar by-pass mode application • Material ca |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 200 |
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Desde 2024. D4U Semiconductor.
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