Vishay V40 Hoja de datos

No.	parte #	Fabricante	Descripción
1	V40100P	Vishay Siliconix	Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLIC
2	V40150C	Vishay Siliconix	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance pleas
3	V40100PG	Vishay Siliconix	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • • • • • • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3
4	V40D60C	Vishay	Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
5	V40PWM45C	Vishay	High Current Density Surface-Mount TMBS Rectifier • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
6	V40100C	Vishay Siliconix	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of comp
7	V40100G	Vishay Siliconix	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maxi
8	V40120C	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22
9	V40150C-E3	Vishay	Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22
10	V40170PW	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For
11	V40D100C	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
12	V40DM120C-M3	Vishay	Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AE
13	V40170PW-M3	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO
14	V40100PGW	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO
15	V40M120C	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Complian
16	V40100K	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • 150 °C high performance Schottky diode • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • Negligible switching losses • Solder bath temperature 275 °C maximu
17	V40D120C	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
18	V40DM120CHM3	Vishay	Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AE
19	V40100C-E3	Vishay	Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C m
20	V40170C-M3	Vishay	Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 V4