Vishay Telefunken TST Hoja de datos

No.	parte #	Fabricante	Descripción
1	TSTA7300	Vishay Telefunken	GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case D D D D D D High radiant power and radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in nea
2	TSTA7500	Vishay Telefunken	GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case D D D D D D High radiant power Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range
3	TSTS710	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra
4	TSTS7100	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra
5	TSTS7103	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra
6	TSTS730	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range
7	TSTS7501	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat
8	TSTS7502	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat
9	TSTS7503	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat
10	TSTA7100	Vishay Telefunken	GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case D D D D D D D Extra high radiant intensity High radiant power Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiatio
11	TSTS7102	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra
12	TSTS7301	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range
13	TSTS7302	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
14	TSTS7303	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range
15	TSTS750	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat
16	TSTS7500	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat
17	TSTS7101	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra
18	TSTS7300	Vishay Telefunken	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range