Vishay Telefunken 1N9 Hoja de datos

No.	parte #	Fabricante	Descripción
1	1N961B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor
2	1N963B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor
3	1N957B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor
4	1N958B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor
5	1N959B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor
6	1N960B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor
7	1N962B	Vishay Telefunken	Silicon Z-Diodes D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ –tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z –current Junction temperature Stor