| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
IR Receiver • High sensitivity and wide receiving angle • AC coupled response from 30 kHz to 60 kHz, all data formats • Improved shielding against electrical field disturbance • AGC to suppress ambient noise • High sensitivity, long receiving range • Supply volt |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 20 kHz to 60 kHz, all data formats • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage 2.5 V to 5.5 V, |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 60 kHz, all data formats • If the IR signal strength is more then 500 mW/m2 (distance less than 0.5 m with a typical IR remote control), the frequency range is limi |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 60 kHz, all data formats • If the IR signal strength is more than 1000 mW/m2 (distance less than 0.35 m with a typical IR remote control), the frequency range is li |
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Vishay |
1IR Receiver • Two lenses for high sensitivity and wide receiving angle • AC coupled response from 30 kHz to 55 kHz, all data formats • If the IR signal strength is less then 0.5 W/m2 (distance more than 0.5 m with a typical IR remote control), the frequency rang |
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Vishay |
IR Receiver • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 60 kHz, all data formats • Height of 0.8 mm • ± 75° half angle sensitivity • Low supply current • Low supply voltage: 2.0 V to 5.5 V • Insensitive to supply voltage |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 50 kHz, all data formats • If the IR signal strength is less then 2 W/m2 (distance more than 0.2 m with a typical IR remote control), the frequency range is up to 5 |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 20 kHz to 60 kHz, all data formats • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage 2.5 V to |
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Vishay Siliconix |
Surface Mount Miniature Trimmers Multi-Turn Cermet • 0.25 W at 70 °C • Professional and industrial grade • Wide ohmic range (10 to 1 M) • Low contact resistance variation (2 % or 3 ) • Small size for optimum packaging density • Tests according to CECC 41000 or IEC 60393-1 • Material categorizatio |
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Vishay Telefunken |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package D D D D D D D D D D SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process Available in 8 mm tape Suitable for pu |
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Vishay Telefunken |
GaAs/GaAlAs Infrared Emitting Diode in SMT Package D D D D D D D D D D D SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process Available in 8 mm tape Suitable for |
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Vishay Telefunken |
GaAs Infrared Emitting Diode in SMT Package D D D D D D D D D D D SMT IRED with high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process Available in 8 mm tape Suitable for DC and |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • • • • • • • • • • • www.DataSheet4U.com 94 8553 High radiant power High speed tr = 30 ns High modulation band width fc = 12 MHz Peak wavelength λp = 870 nm High reliability e3 Applications • High speed IR data transmission • High power emitter f |
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Vishay |
High Power Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 940 nm • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 12° • Low forward voltage • |
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Vishay |
High Power Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 940 nm • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 12° • Low forward voltage • |
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Vishay |
High Power Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 940 nm • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 12° • Low forward voltage • |
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Vishay |
High Power Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 940 nm • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 12° • Low forward voltage • |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 60 kHz, all data formats • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage 2.0 V to 5.5 V |
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Vishay |
IR Sensor • Photo detector and preamplifier in one package • AC coupled response from 20 kHz to 60 kHz, all data formats • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage 2.5 V to 5.5 V, |
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Vishay Siliconix |
Surface Mount Miniature Trimmers Multi-Turn Cermet ∑ 0.25 Watt at 85°C ∑ Professional grade ∑ Excellent stability The TSM4 trimming potentiometer has been designed for surface mount applications and offers volumetric efficiency 5 x 5 x 3.7 mm3 with high performance and stability. The TSM4 design is s |
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Desde 2024. D4U Semiconductor.
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