Vishay TP0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	TP0101TS	Vishay Siliconix	P-Channel 20-V (D-S) MOSFET/ Low-Threshold D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits
2	TP0202K	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET D D D D D D High-Side Switching Low On-Resistance: 1.2 Ω (typ) Low Threshold: −2.0 V (typ) Fast Swtiching Speed: 14 ns (typ) Low Input Capacitance: 31 pF (typ) Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error)
3	TP0610K	Vishay Siliconix	P-Channel 60-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 6 Ω • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • 2000 V ESD Prote
4	TP0610KL	Vishay	P-Channel MOSFET D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S1 G2
5	TP0101T	Vishay Siliconix	P-Channel 20-V (D-S) MOSFET/ Low-Threshold D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits
6	TP0610L	Vishay Siliconix	P-Channel 60-V (D-S) MOSFET D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: −1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Eas
7	TP0202T	Vishay	P-Channel 20-V (D-S) MOSFET D High-Side Switching D Low On-Resistance: 0.9 W D Low Threshold: –2.1 V D Fast Switching Speed: 18 ns D Low Input Capacitance: 55 pF BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D E
8	VS-GT200TP065N	Vishay	Half Bridge - Trench IGBT • Trench IGBT • Very low VCE(on) • 5 μs short circuit capability • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package • TJ = 175 °C • UL pending • Material categori
9	TP0610T	Vishay Siliconix	P-Channel MOSFET D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: −1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Eas