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Vishay Siliconix |
High Speed Infrared Emitting Diode • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for |
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Desde 2024. D4U Semiconductor.
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