| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
Surface Mount Miniature Trimmers Multi-Turn Cermet • 0.25 W at 70 °C • Professional and industrial grade • Wide ohmic range (10 to 1 M) • Low contact resistance variation (2 % or 3 ) • Small size for optimum packaging density • Tests according to CECC 41000 or IEC 60393-1 • Material categorizatio |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • • • • • • • • • • • www.DataSheet4U.com 94 8553 High radiant power High speed tr = 30 ns High modulation band width fc = 12 MHz Peak wavelength λp = 870 nm High reliability e3 Applications • High speed IR data transmission • High power emitter f |
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Vishay Siliconix |
Surface Mount Miniature Trimmers Multi-Turn Cermet ∑ 0.25 Watt at 85°C ∑ Professional grade ∑ Excellent stability The TSM4 trimming potentiometer has been designed for surface mount applications and offers volumetric efficiency 5 x 5 x 3.7 mm3 with high performance and stability. The TSM4 design is s |
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Vishay Siliconix |
Surface Mount Miniature Trimmers Multi-Turn Cermet ∑ 0.25 Watt at 85°C ∑ Professional grade ∑ Excellent stability The TSM4 trimming potentiometer has been designed for surface mount applications and offers volumetric efficiency 5 x 5 x 3.7 mm3 with high performance and stability. The TSM4 design is s |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 890 nm • High radiant power • Angle of half intensity: ϕ = ± 11° • Low forward voltage • Suitable for high pulse current |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 890 nm • High radiant power • Angle of half intensity: ϕ = ± 11° • Low forward voltage • Suitable for high pulse current |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • Package type: surface-mount • Package form: GW, RGW, yoke • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 890 nm • High radiant power • Angle of half intensity: ϕ = ± 11° • Low forward voltage • Suitable for high pulse current |
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Vishay Siliconix |
GaAs/GaAlAs Infrared Emitting Diode • • • • • SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process • Packed in 8 mm tape • • • • Suitable for pulse |
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Desde 2024. D4U Semiconductor.
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