| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
Ultrabright LED • Untinted non diffused lens • Utilizing ultrabright AllnGaP (AS) and InGaN technology e2 • High luminous intensity • High operating tempreature: Tj (chip junction temperature) up to 125 °C for AllnGaP devices • Luminous intensity and color categoriz |
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Vishay Siliconix |
Ultrabright White LED • Untinted non diffused lens • Utilizing ultrabright InGaN technology • High luminous intensity • Luminous intensity and color categorized for each packing unit • ESD-withstand voltage: 1 kV for InGaN • Lead-free device e2 Pb Pb-free Applications I |
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Desde 2024. D4U Semiconductor.
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