| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
(SS25S / SS26S) Surface Mount Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compli |
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Vishay Siliconix |
High Voltage Surface Mount Schottky Rectifier • Low profile package Available • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
High Voltage Surface Mount Schottky Rectifier • Low profile package Available • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
(SS2H9 / SS2H10) High-Voltage Surface Mount Schottky Rectifier • • • • • • • • • Low profile package Guardring for overvoltage protection Ideal for automated placement Low power losses, high efficiency Low forward voltage drop Low leakage current High surge capability Meets MSL level 1, per J-STD-020C Solder Dip |
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Vishay Siliconix |
Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified availabl |
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Vishay Siliconix |
Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified availabl |
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Vishay Siliconix |
(SS2H9 / SS2H10) High-Voltage Surface Mount Schottky Rectifier • • • • • • • • • Low profile package Guardring for overvoltage protection Ideal for automated placement Low power losses, high efficiency Low forward voltage drop Low leakage current High surge capability Meets MSL level 1, per J-STD-020C Solder Dip |
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Vishay Siliconix |
(SS2P2 - SS2P4) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.0 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • AEC- |
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Vishay Siliconix |
(SS2P2L / SS2P3L) Low VF High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.0 mm ® eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualif |
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Vishay Siliconix |
(SS22S - SS24S) Surface Mount Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in |
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Vishay Siliconix |
(SS2P2 - SS2P4) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.0 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • AEC- |
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Vishay Siliconix |
(SS2P2 - SS2P4) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.0 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • AEC- |
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Vishay Siliconix |
(SS2P2L / SS2P3L) Low VF High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.0 mm ® eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualif |
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Vishay Siliconix |
(SS2P5 / SS2P6) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 quali |
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Vishay Siliconix |
(SS2P5 / SS2P6) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 quali |
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Vishay Siliconix |
High Voltage Surface Mount Schottky Barrier Rectifier • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AE |
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Vishay Siliconix |
High Voltage Surface Mount Schottky Barrier Rectifier • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AE |
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Vishay Siliconix |
(SS22S - SS24S) Surface Mount Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in |
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Vishay Siliconix |
(SS22S - SS24S) Surface Mount Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in |
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Vishay Siliconix |
(SS25S / SS26S) Surface Mount Schottky Barrier Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compli |
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Desde 2024. D4U Semiconductor.
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