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Vishay Siliconix |
Bi-Directional N-Channel MOSFET PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.045 @ VGS = 4.5 V 20 0.048 @ VGS = 3.7 V 0.057 @ VGS = 2.5 V 0.072 @ VGS = 1.8 V IS1S2 (A) 5.0 4.8 4.4 3.9 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale |
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Vishay Siliconix |
P-Channel MOSFET ID (A) −5.9 −5.0 rDS(on) (W) 0.054 @ VGS = −4.5 V 0.075 @ VGS = −2.5 V D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D D D D Load Switch B |
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Vishay Siliconix |
Bi-Directional P-Channel MOSFET exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the sa |
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Vishay Siliconix |
Bi-Directional N-Channel MOSFET PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.024 @ VGS = 4.5 V 20 0.026 @ VGS = 3.7 V 0.034 @ VGS = 2.5 V 0.040 @ VGS = 1.8 V Bump Side View IS1S2 (A) 7 6.8 5.0 5.5 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOO |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • PA |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • PA |
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Vishay Siliconix |
Bi-Directional N-Channel MOSFET an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area • Ultra-Low On-Resistance • Material categorization: For definitions of compliance please see www.vishay.com/doc |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free according to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area • Compliant to RoHS Directive 2002/95/EC APPL |
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Vishay Siliconix |
P-Channel MOSFET ID (A)a −11.7 −10.7 −9.6 −8.3 21 nC Qg (Typ) Completely D TrenchFETr Power MOSFET Pb-free D Industry First 1.5-V Rated MOSFET D Ultra Small MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Ar |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® power MOSFET • MICRO FOOT® chipscale packaging reduces footprint area profile (0.62 mm) and on-resistance per footprint area • Pin compatible to industry standard Si3443DV • Material categorization: for definitions of compliance please s |
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Vishay Siliconix |
N-Channel 20 V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small 0.8 mm x 0.8 mm Outline • Ultra Thin 0.357 mm Height • Typical ESD Protection 1500 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS MICRO FOOT Bump |
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Desde 2024. D4U Semiconductor.
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