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Vishay Siliconix |
N-Channel 60-V (D-S) Fast Switching MOSFET an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the |
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Vishay Siliconix |
N-Channel 20-V (D-S) Fast Switching MOSFET ID (A) 22 19 rDS(on) (W) 0.0065 @ VGS = 4.5 V 0.009 @ VGS = 2.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Synchronous Rectifier - Low Output Voltage D Portab |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.00425 @ VGS = 4.5 V ID (A) 29 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters - Low-S |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V ID (A) 30 27 Qg (Typ) 36 D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr |
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Vishay Siliconix |
P-Channel MOSFET ID (A) –4.5 rDS(on) (W) 0.1 @ VGS = –4.5 V D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile APPLICATIONS D Load Switching D PA Switching S S S PowerPAKt 1212-8 3.30 mm S 1 2 3 |
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Vishay Siliconix |
Dual P-Channel 12-V (D-S) MOSFET • TrenchFET® Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK® Package • Advanced High Cell Density Process • Ultra-Low rDS(on), and High PD Capability Pb-free Available RoHS* COMPLIANT APPLICATIONS • • • • Load Switch PA Switch Bat |
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Vishay Siliconix |
N-Channel 200-V (D-S) MOSFET ID (A) 5.3 5.0 rDS(on) (W) 0.080 @ VGS = 10 V 0.090 @ VGS = 6 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for High Densi |
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Vishay Siliconix |
N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.025 @ VGS = 10 V 0.028 @ VGS = 6.0 V ID (A) 9.3 8.8 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested A |
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Vishay Siliconix |
Complementary 30-V (D-S) MOSFET rDS(on) (W) 0.051 @ VGS = −10 V 0.075 @ VGS = −6 V 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V ID (A) −6.4 −5.3 7.7 6.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Backlight Inverter |
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Vishay Siliconix |
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode ID (A) –6.3 –5.3 –4.6 rDS(on) (W) 0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATION |
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Vishay Siliconix |
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode ID (A) - 6.3 - 5.3 - 4.6 rDS(on) (W) 0.048 @ VGS = -4.5 V 0.068 @ VGS = -2.5 V 0.090 @ VGS = -1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching |
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Vishay Siliconix |
N-Channel 12-V (D-S) MOSFET e device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specificati |
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Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.00225 @ VGS = 10 V 0.00275 @ VGS = 4.5 V ID (A) 29 25 D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized APPLICATIONS D Low Output Voltage Synchronous Rectifier PowerPAKt SO-8 D 6.15 mm |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 20 17 rDS(on) (W) 0.007 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS D Sychronous Rectif |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 25 22 rDS(on) (W) 0.0045 @ VGS = 10 V 0.006 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D Low Gate Charge D 100% Rg Tested APPLICATIONS D Synchronous Rectifier PowerPAK SO- |
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Vishay Siliconix |
N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.085 @ VGS = 10 V 0.095 @ VGS = 6.0 V ID (A) 4.8 4.5 D TrenchFETr Power MOSFET for Fast Switching D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/D |
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Vishay Siliconix |
Dual N-Channel 100-V (D-S) MOSFET n of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed spec |
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Vishay Siliconix |
Dual N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.150 @ VGS = 10 V 0.168 @ VGS = 6 V ID (A) 3.3 3.1 D D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings PWM Optimized for Fast Switching Avalanche Rated Pac |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET: 1.8 V Rated • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile APPLICATIONS • Load Switch 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile APPLICATIONS • Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unles |
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Desde 2024. D4U Semiconductor.
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