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Vishay Siliconix |
1.0A RECTIFIER • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF |
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Vishay Siliconix |
Single-Phase Single In-Line Bridge Rectifier • UL recognition file number E54214 • Ideal for printed circuit boards • High surge current capability • High case dielectric strength of 1500 VRMS • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APP |
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Vishay Siliconix |
Bulk Metal Foil Technology Industrial Precision Resistors • Temperature Coefficient of Resistance (TCR)1): ± 4 ppm/°C (0 °C to + 60 °C) ± 8 ppm/°C (- 55 °C to + 125 °C, + 25 °C Ref.) Pb-free Available • Resistance Range: 0.5 Ω to 1 MΩ (higher or RoHS* lower values of resistance are available) COMPLIANT |
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Vishay Siliconix |
Bulk Metal Foil Technology Industrial Precision Resistors • Temperature Coefficient of Resistance (TCR)1): ± 4 ppm/°C (0 °C to + 60 °C) ± 8 ppm/°C (- 55 °C to + 125 °C, + 25 °C Ref.) Pb-free Available • Resistance Range: 0.5 Ω to 1 MΩ (higher or RoHS* lower values of resistance are available) COMPLIANT |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLIC |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance pleas |
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Vishay Siliconix |
Bridge Rectifiers • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip |
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Vishay Siliconix |
Miniature Ultrafast Plastic Rectifier • Glass passivated chip junction • Ultrafast reverse recovery time • Soft recovery characteristics • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Ma |
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Vishay Siliconix |
Bulk Metal Foil Technology Industrial Precision Resistors • Temperature Coefficient of Resistance (TCR)1): ± 4 ppm/°C (0 °C to + 60 °C) ± 8 ppm/°C (- 55 °C to + 125 °C, + 25 °C Ref.) Pb-free Available • Resistance Range: 0.5 Ω to 1 MΩ (higher or RoHS* lower values of resistance are available) COMPLIANT |
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Vishay Siliconix |
Glass Passivated Ultrafast Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for printed circuit boards • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high effici |
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Vishay Siliconix |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vis |
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Vishay Siliconix |
(MBRx10100) High Voltage Schottky Rectifiers • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency i |
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Vishay Siliconix |
Fast Switching Plastic Rectifier • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/d |
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Vishay Siliconix |
Fast Switching Plastic Rectifier • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/d |
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Vishay Siliconix |
(BA157 - BA159) Fast Switching Plastic Rectifier • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/d |
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Vishay Siliconix |
Hyperfast Rectifier • Hyperfast recovery time Base common cathode 2 • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Dual diode center tap • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS TO-220AC 1 Catho |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • • • • • • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3 |
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Vishay Siliconix |
Bulk Metal Foil Technology Industrial Precision Resistors • Temperature Coefficient of Resistance (TCR)1): ± 4 ppm/°C (0 °C to + 60 °C) ± 8 ppm/°C (- 55 °C to + 125 °C, + 25 °C Ref.) Pb-free Available • Resistance Range: 0.5 Ω to 1 MΩ (higher or RoHS* lower values of resistance are available) COMPLIANT |
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Vishay Siliconix |
Glass Passivated Ultrafast Bridge Rectifier • Ideal for automated placement • High surge current capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in |
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Vishay Siliconix |
Surface Mount Ultrafast Plastic Rectifier • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • Compliant to RoHS directive 2002/95/EC and |
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Desde 2024. D4U Semiconductor.
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