No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
(MBRx10100) High Voltage Schottky Rectifiers • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency i |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-2 |
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Vishay Siliconix |
Dual Common Cathode High Voltage Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 2 |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for def |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
(MBR40H35CT - MBR40H60CT) Dual Schottky Barrier Rectifiers • • • • • Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in high frequency inverters, free wheeling, and polarity prote |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: For definitions of co |
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Vishay Siliconix |
Schottky Barrier Rectifiers • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: |
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Vishay Siliconix |
Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: |
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Vishay Siliconix |
High Voltage Schottky Rectifiers • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency i |
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Vishay Siliconix |
Dual High-Voltage Schottky Rectifiers • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low leakage current, Low power loss, High efficiency • Guardrin |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • |
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Vishay Siliconix |
Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: |
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Vishay Siliconix |
(MBR40H35CT - MBR40H60CT) Dual Schottky Barrier Rectifiers • • • • • Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in high frequency inverters, free wheeling, and polarity prote |
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Vishay Siliconix |
(MBR40H35CT - MBR40H60CT) Dual Schottky Barrier Rectifiers • • • • • Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in high frequency inverters, free wheeling, and polarity prote |
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Vishay Siliconix |
(MBR40H35CT - MBR40H60CT) Dual Schottky Barrier Rectifiers • • • • • Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in high frequency inverters, free wheeling, and polarity prote |
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