| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
IGBT • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability SOT-227 • Fully isolated package • Speed 4 kHz to 30 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outlin |
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Vishay Siliconix |
IGBT • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability SOT-227 • Fully isolated package • Speed 4 kHz to 30 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outlin |
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Vishay Siliconix |
Insulated Gate Bipolar Transistor • Trench IGBT technology temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 150 °C • Fully isolated package • Very low interna |
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Vishay Siliconix |
Insulated Gate Bipolar Transistor • Trench IGBT technology temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 175 °C • Fully isolated package • Very low internal |
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Desde 2024. D4U Semiconductor.
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