| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
Ultrafast IGBT • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outli |
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Vishay Siliconix |
Ultrafast IGBT • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outli |
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Vishay Siliconix |
IGBT Fourpack Module • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design ECONO2 4PACK RoHS COMPLIANT • Speed 8 to 60 kHz • Designed and qualified for industrial market BENE |
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Desde 2024. D4U Semiconductor.
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