Vishay Siliconix 517 Hoja de datos

No.	parte #	Fabricante	Descripción
1	DG2517	Vishay Siliconix	Dual SPDT Analog Switch • 1.8 V to 5.5 V single supply operation • Low RON: 3 Ω at 4.2 V • 242 MHz, - 3 dB bandwidth • Low off-isolation, - 51 dB at 10 MHz • + 1.6 V logic compatible BENEFITS • High linearity • Low power consumption • High bandwidth • Full rail signal swing
2	517D	Vishay Siliconix	Aluminum Capacitor • High CV per case size • Low cost • Solvent resistant construction (through 100 WVDC) • Life test to 2000 h at +105 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION V
3	SI5517DU	Vishay Siliconix	N- and P-Channel MOSFET • TrenchFET® power MOSFETs • Thermally enhanced PowerPAK ChipFET package - Small footprint area - Low on-resistance - Thin 0.8 mm profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1
4	DG3517	Vishay Siliconix	Dual SPDT Analog Switches • Halogen-free according to IEC 61249-2-21 Definition • 1.8 V to 5.5 V operation • 2.5  at 2.7 V RON • 300 MHz - 3 dB bandwidth • ESD method 3015.7 > 2 kV • Latch-up current 200 mA (JESD 78) • 1.6 V logic compatible • Compliant to RoHS Directive 200