Vishay Siliconix 45P Hoja de datos

No.	parte #	Fabricante	Descripción
1	SUD45P03-15	Vishay Siliconix	P-Channel MOSFET stics). b. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara,
2	MBR40H45PT	Vishay Siliconix	Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: For definitions of co
3	45P03-10	Vishay Siliconix	SUD45P03-10 nd Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70766 S-02596—Rev. D, 21-Nov-00 www.vishay.com 2-1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SUD45P03-10 Vishay Siliconix SPECIFICATIO
4	SUD45P03-10	Vishay Siliconix	P-Channel MOSFET • TrenchFET® Power MOSFETs RoHS COMPLIANT TO-252 S G Drain Connected to Tab GDS Top View Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Dr
5	SUD45P03-15A	Vishay Siliconix	P-Channel MOSFET _C/W www.vishay.com S FaxBack 408-970-5600 2-1 SUD45P03-15A Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero