| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
Standard Recovery Diodes • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAGN-A-PAKTM RoHS COMPLIANT • UL E78996 |
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Vishay Siliconix |
320 x 24 Dots Graphic LCD • Built-in SED 1335 controller and SRAM • Built-in negative voltage generator • 1/240 duty cycle • Touch screen option (analog type) • Temperature compensation option MECHANICAL DATA ITEM Module Dimension Viewing Area Dot Size Dot Pitch STANDARD VAL |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions |
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Vishay Siliconix |
Schottky Barrier Rectifier • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE |
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Vishay Siliconix |
Power SMD LED PLCC-4 • High efficient INGaN technology • Available in 8 mm tape • Luminous intensity, color and forward e3 voltage categorized per packing unit • Luminous intensity ratio per packing unit IVmax./IVmin. ≤ 1.6 • ESD class 1 • Suitable for all soldering meth |
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Vishay Siliconix |
Standard Recovery Diodes • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAGN-A-PAKTM RoHS COMPLIANT • UL E78996 |
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Vishay Siliconix |
High Surge Suppression Varistors • Zinc oxide disc, epoxy coated RoHS COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Certified according to UL1449, VDE/IEC 61051 and CSA APPLICATION • Supression of transients DESCRIPTION |
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Vishay Siliconix |
N-Channel MOSFET -98 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W 2-1 Si2320DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits |
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Vishay Siliconix |
320 x 24 Dots Graphic LCD • Built-in SED 1335 controller and SRAM • Built-in negative voltage generator • 1/240 duty cycle • Touch screen option (analog type) • Temperature compensation option MECHANICAL DATA ITEM Module Dimension Viewing Area Dot Size Dot Pitch STANDARD VAL |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion RoHS COMPLIANT • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions |
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|
|
|
Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions |
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Vishay Siliconix |
Schottky Barrier Rectifier • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to Ro |
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Vishay Siliconix |
Power SMD LED PLCC-4 • High efficient INGaN technology • Available in 8 mm tape • Luminous intensity, color and forward e3 voltage categorized per packing unit • Luminous intensity ratio per packing unit IVmax./IVmin. ≤ 1.6 • ESD class 1 • Suitable for all soldering meth |
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|
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|
Vishay Siliconix |
Power SMD LED PLCC-4 • High efficient INGaN technology • Available in 8 mm tape • Luminous intensity, color and forward e3 voltage categorized per packing unit • Luminous intensity ratio per packing unit IVmax./IVmin. ≤ 1.6 • ESD class 1 • Suitable for all soldering meth |
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|
Vishay Siliconix |
Standard Recovery Diodes • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAGN-A-PAKTM RoHS COMPLIANT • UL E78996 |
|
|
|
|
Vishay Siliconix |
Standard Recovery Diodes • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAGN-A-PAKTM RoHS COMPLIANT • UL E78996 |
|
|
|
|
Vishay Siliconix |
High Surge Suppression Varistors • Zinc oxide disc, epoxy coated RoHS COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Certified according to UL1449, VDE/IEC 61051 and CSA APPLICATION • Supression of transients DESCRIPTION |
|
|
|
|
Vishay Siliconix |
High Surge Suppression Varistors • Zinc oxide disc, epoxy coated RoHS COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Certified according to UL1449, VDE/IEC 61051 and CSA APPLICATION • Supression of transients DESCRIPTION |
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Desde 2024. D4U Semiconductor.
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