| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High power density DC/DC • Synchronous rectification • VRMs and embedded DC/DC G |
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Vishay |
N-Channel MOSFET • TrenchFET® gen III power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • Low-side switch for DC/DC converters - Servers - POL - VRM G • OR-ing |
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Vishay |
P-Channel MOSFET • Leadership RDS(on) minimizes power loss from conduction • 100 % Rg and UIS tested • Enhance power dissipation and lower RthJC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Adapter and c |
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Vishay |
N-Channel MOSFET |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Sy |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS • DC/DC Conversion - Low-Side Switch • Notebook • Server 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering |
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Vishay |
N-Channel MOSFET • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www. |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Conversion D • High Current Power Rails in Computing • Load Switching • |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Leadership RDS(on) minimizes power loss from conduction • 100 % Rg and UIS tested • Enhance power dissipation and lower RthJC • Material categorization: for definitions of c |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • 100 % Rg and UIS tested • Enhance power dissipation and lower RthJC • Leadership RDS(on) minimizes power loss from conduction • Material categorization: for definitions of c |
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Vishay Siliconix |
SIR Endec for IrDA Applications Integrated Interface Circuit • Pulse shaping function (shortening and stretching) used in SIR IrDA® applications • Directly interfaces the SIR transceiver TFD..series to an RS232 port • Programmable baud clock generator (1200 Hz to 115.2 kHz), 13 baud rates • 3/16 bit pulse dura |
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Vishay Siliconix |
SIR Endec for IrDA Applications Integrated Interface Circuit • Pulse shaping function (shortening and stretching) used in SIR IrDA® applications • Directly interfaces the SIR transceiver TFD..series to an RS232 port • Programmable baud clock generator (1200 Hz to 115.2 kHz), 13 baud rates • 3/16 bit pulse dura |
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Vishay |
N-Channel 30 V (D-S) MOSFET • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • High power density DC/DC • Synchronous rectification • Embedded DC/DC G D |
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Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • New MOSFET Technology Optimized for Ringing Reduction in Switching Application • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 6.15 mm D 8D |
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Vishay |
N-Channel MOSFET • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Notebook PC core - Low side • VRM • POL D G S N-Channel MOSFET ORDERING INFORMATION |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Optimized for high-side switching in synchronous buck converters • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC conversio |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen V power MOSFET • 2.5 V rated RDS(on) • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery management • Load switching D G S N-Channel MOSFET |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • SKYFET® with monolithic Schottky diode • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Synchronous buck • Synchronous recti |
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Vishay |
N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • 100 ^% Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectificati |
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Vishay |
N-Channel 100-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = |
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Desde 2024. D4U Semiconductor.
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