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Vishay Siliconix |
Dual N-Channel MOSFET physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same num |
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Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET Unlimited Pages SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over th |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel *Typical value by design N-Channel S2 D 8 D 7 S2 6 S2 5 |
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Vishay |
P-Channel 20-V (D-S) MOSFET 01-May-00 Limit 83 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si6447DQ Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Vol |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free • TrenchFET® Power MOSFETs S* RoHS COMPLIANT TSSOP-8 D1 S2 S3 G4 Si6475DQ 8D 7S 6S 5D Top View Ordering Information: Si6475DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common. D P-Chann |
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Vishay Siliconix |
Fast Switching MOSFET ment Number: 70187 S-56944—Rev. D, 23-Nov-98 Symbol RthJA N- or P-Channel 125 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si6801DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition St |
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Vishay Siliconix |
P-Channel Reduced Qg / MOSFET with Schottky Diode 30 1.2 0.76 1.0 0.64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t |
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Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET RthJA RthJF Symbol Typical 89 120 70 Maximum 110 150 90 Unit _C/W a. Surface Mounted on 1” x 1” FR4 Board. DataSheet4U.com Document Number: 72016 S-21780—Rev. A, 07-Oct-02 www.vishay.com 1 www.DataSheet4U.com Si6943BDQ Vishay Siliconix New P |
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Vishay |
Dual P-Channel 20-V (D-S) MOSFET 2—Rev. E, 27-Mar-00 Limit 125 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si6953DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Ze |
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Vishay |
Dual N-Channel 20-V (D-S) MOSFET v. E, 27-Mar-00 Limit 125 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si6956DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero G |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6463BDQ 8D 7S 6S 5D Top View Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-fr |
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Vishay Siliconix |
Dual P-Channel MOSFET t Number: 71230 S-01235—Rev. A, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 85 35 Maximum 70 105 45 Unit _C/W 2-1 Si6875DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = |
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Vishay Siliconix |
Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.026 @ VGS = -4.5 V -12 0.035 @ VGS = -2.5 V 0.046 @ VGS = -1.8 V D TrenchFETr Power MOSFETS ID (A) -5.1 -4.5 -3.9 APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Orderi |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free • Low RDS(on) • VGS Max Rating: 14 V • Exceeds 2 kV ESD Protection • 28 V VDS Rated • Symmetrical Voltage Blocking (Off Voltage) RoHS COMPLIANT DESCRIPTION The Si6924AEDQ is a dual N-Channel MOSFET with ESD protection and gate over-v |
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Vishay Siliconix |
N-Channel MOSFET D D D D Low rDS(on) VGS Max Rating: 14 V Exceeds 2-kV ESD Protection Low Profile TSSOP-8 Package D rDS(on) Rating at 2.5-V VGS D 28-V VDS Rated D Symetrical Voltage Blocking (Off Voltage) DESCRIPTION The Si6924EDQ is a dual n-channel MOSFET with ES |
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Vishay Siliconix |
Dual N-Channel MOSFET S-49455—Rev. A, 17-Dec-96 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 125 Unit _C/W 2-1 Si6925DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gat |
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Vishay Siliconix |
Dual N-Channel MOSFET A Limit 125 Unit _C/W 2-1 Si6946DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VG |
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Vishay Siliconix |
P-Channel MOSFET S-56943—Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 83 Unit _C/W 85 2-1 Si6965DQ Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Lea |
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Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated RoHS COMPLIANT D1 1 S1 2 S1 3 G1 4 TSSOP-8 Si6967DQ Top View 8 D2 7 S2 6 S2 5 G2 Ordering Information: Si6967DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 S1 D1 S2 G2 D2 ABSOLUTE MAXIMU |
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Vishay Siliconix |
N-Channel Reduced Qg / MOSFET with Schottky Diode 0.64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a |
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Desde 2024. D4U Semiconductor.
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