| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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|
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|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
|
|
|
|
Vishay |
TVS • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward vol |
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Vishay |
Transient Voltage Suppressors • Low profile package Available • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 600 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability Ava |
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Vishay |
Transient Voltage Suppressors • Low profile package Available • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 600 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability Ava |
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Vishay |
Transient Voltage Suppressors • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward volt |
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Desde 2024. D4U Semiconductor.
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