No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET d as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of |
|
|
|
Vishay |
MOSFET • TrenchFET® power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1000 V (HBM) • 100 % Rg tested • Material categorization: for definitions of compliance please see www.visha |
|
|
|
Vishay |
Dual P-Channel 30-V (D-S) MOSFET • TrenchFET® Gen III Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Sm |
|
|
|
Vishay |
P-Channel 20-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection 2400 V • 100 % Rg Tested • Compliant to RoHS Directiv |
|
|
|
Vishay |
N- and P-Channel 12-V (D-S) MOSFET ID (A) 4.5 a Qg (Typ.) 4.5 nC 4.5a 4.5a - 4.5a - 4.5a - 4.5 a • Halogen-free • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT 5 nC APPLICATIONS • Load Switch f |
|
|
|
Vishay |
N- and P-Channel 12-V (D-S) MOSFET ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 4.5a 8.2 nC 5.6 nC Qg (Typ.) N-Channel 12 • TrenchFET® Power MOSFETs • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Material categorization: For definitio |
|
|
|
Vishay |
N-Channel MOSFET • TrenchFET® Power MOSFETs • Typical ESD protection: N-channel 2400 V P-channel 2000 V • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Portable devices such as smart phone |
|
|
|
Vishay |
Dual N-Channel MOSFET • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT PowerPAK SC-70-6 Dual 1 S1 D1 D1 6 G2 5 2.05 mm S2 4 2 G1 D2 3 D2 2.05 mm APPLICATIONS • Load |
|
|
|
Vishay |
P-Channel MOSFET • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single |
|
|
|
Vishay |
N-Channel 100 V (D-S) MOSFET ID (A)a 11.3 9 Qg (Typ.) 3.5 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Converters • Full-Bridge Converters • For Power Br |
|
|
|
Vishay |
P-Channel 8-V (D-S) MOSFET Qg (Typ.) 19 nC - 12a - 12a • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch for Portable Devices S PowerPA |
|
|
|
Vishay |
P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.033 at VGS = - 4.5 V - 20 0.042 at VGS = - 2.5 V 0.055 at VGS = - 1.8 V ID (A)a Qg (Typ.) - 12 - 12 - 12 18 nC • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - |
|
|
|
Vishay |
N- and P-Channel 12-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices • |
|
|
|
Vishay |
P-Channel 20-V (D-S) MOSFET • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Volt |
|
|
|
Vishay |
Dual P-Channel 20 V (D-S) MOSFET • TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www |
|
|
|
Vishay |
Dual P-Channel 20 V (D-S) MOSFET • TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www |
|
|
|
Vishay |
Dual P-Channel 12-V (D-S) MOSFET Qg (Typ.) 8.2 nC • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS PowerPAK SC-70-6 Dual • Load Switch, PA Switch and Batte |
|
|
|
Vishay |
N-channel MOSFET • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® RoHS SC-70 Package COMPLIANT - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile • Low Vf Trench Schottky Diode APPLICATIONS • Load S |
|
|
|
Vishay |
MOSFET • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS - Qoss FOM • Thermally enhanced PowerPAK® SC-70 package - Small footprint area • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/do |
|
|
|
Vishay |
MOSFET • TrenchFET® Gen III p-channel power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • 100 % Rg tested • RDS(on) rating at VGS = -1.8 V • Built in ESD protection with Zener diode • Typical ESD performa |
|