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Vishay Siliconix |
N-Channel 60-V (D-S) Fast Switching MOSFET an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the |
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Vishay |
N-channel MOSFET • Halogen-free available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) Si76 |
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Vishay |
30V P-Channel MOSFET • TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with small size and low 1.07 mm profile • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load |
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Vishay |
N-Channel 30-V (D-S) Fast Switching MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS • DC/DC Conversion D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS |
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Vishay |
Dual N-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters D1 D2 G1 N-Channel |
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Vishay |
N-channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology • Qg Optimized • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLI |
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Vishay Siliconix |
N-Channel 20-V (D-S) Fast Switching MOSFET ID (A) 22 19 rDS(on) (W) 0.0065 @ VGS = 4.5 V 0.009 @ VGS = 2.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Synchronous Rectifier - Low Output Voltage D Portab |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.00425 @ VGS = 4.5 V ID (A) 29 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters - Low-S |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V ID (A) 30 27 Qg (Typ) 36 D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr |
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Vishay Siliconix |
P-Channel MOSFET ID (A) –4.5 rDS(on) (W) 0.1 @ VGS = –4.5 V D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile APPLICATIONS D Load Switching D PA Switching S S S PowerPAKt 1212-8 3.30 mm S 1 2 3 |
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Vishay Siliconix |
Dual P-Channel 12-V (D-S) MOSFET • TrenchFET® Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK® Package • Advanced High Cell Density Process • Ultra-Low rDS(on), and High PD Capability Pb-free Available RoHS* COMPLIANT APPLICATIONS • • • • Load Switch PA Switch Bat |
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Vishay |
Dual P-Channel 20-V (D-S) MOSFET ID (A) - 5.7 - 5.0 - 4.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable - PA Switch - Battery Switch - Load Switch PowerPAK 1212-8 S1 S2 3.30 mm S1 1 2 3.30 mm G1 S2 G1 G2 3 |
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Vishay |
N-Channel 30 V (D-S) Fast Switching MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • Compliant to RoHS Directive 2002/ |
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Vishay |
N-Channel 100-V (D-S) MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Primary Switch • Isolated DC/DC Converters D G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Sym |
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Vishay |
N-Channel Fast Switching MOSFET • TrenchFET® power MOSFETs • New low thermal resistance PowerPAK® package with low 1.07 mm profile • PWM optimized for fast switching • 100 % Rg tested Available • Material categorization: for definitions of compliance please see www.vishay.co |
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Vishay |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Adaptor/Battery Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 ° |
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Vishay |
N-Channel Reduced N-Channel Reduced • Halogen-free available • TrenchFET® Gen II Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS • DC/DC Conversion for PC D RoHS COMPLIANT G S N-Ch |
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Vishay |
P-Channel 30 V (D-S) MOSFET • TrenchFET® Gen III p-channel power MOSFET • RDS(on) rating at VGS = -2.5 V • 100 % Rg and UIS tested • Typical ESD protection: 4600 V HBM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • |
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Vishay |
MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III P-Channel Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bot |
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Vishay Siliconix |
N-Channel 200-V (D-S) MOSFET ID (A) 5.3 5.0 rDS(on) (W) 0.080 @ VGS = 10 V 0.090 @ VGS = 6 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for High Densi |
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Desde 2024. D4U Semiconductor.
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