Vishay SA2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	CSA2D	Vishay	Surface Mount Glass Passivated Rectifier • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material ca
2	CSA2G	Vishay	Surface Mount Glass Passivated Rectifier • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material ca
3	VS-FC270SA20	Vishay	Power Module / Single Switch - Power MOSFET • ID = 287 A, TC = 25 °C • ThunderFET power MOSFET • Reduced switching and conduction losses • Maximum 175 °C junction temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC conve
4	SA26A	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
5	SA26	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
6	CSA2M	Vishay	Surface Mount Glass Passivated Rectifier • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material ca
7	CSA2J	Vishay	Surface Mount Glass Passivated Rectifier • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material ca
8	SSA23L	Vishay Siliconix	High Current Density Surface Mount Schottky Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q1
9	SSA24	Vishay Siliconix	High Current Density Surface Mount Schottky Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q1
10	VSSA210	Vishay	Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to
11	SA28A	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
12	SA28	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
13	SA24	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
14	SA24A	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
15	SA22A	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
16	SA22	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
17	SA20A	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
18	SA20	Vishay	Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low in
19	CSA2K	Vishay	Surface Mount Glass Passivated Rectifier • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material ca