| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
Tantalum Electrolytic Capacitors |
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Vishay Siliconix |
High Current Density Surface Mount Schottky Barrier Rectifier • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal impedance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified av |
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Vishay Siliconix |
(SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Compliant to RoHS Directiv |
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Vishay Siliconix |
(SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Compliant to RoHS Directiv |
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Vishay Siliconix |
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Compliant to RoHS Directiv |
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Vishay Siliconix |
(SS8P3C / SS8P4C) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, |
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Vishay Siliconix |
(SS8P3C / SS8P4C) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, |
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Desde 2024. D4U Semiconductor.
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