| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Center tap D2PAK and TO-262 packages • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced |
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Vishay |
Schottky Barrier Rectifier 0.24 (6.096) 0.12 (3.05) • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Met |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • Center tap TO-247 package Pb-free • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Available RoHS* COMP |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • High frequency operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263A |
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Vishay Siliconix |
(MBRx10100) High Voltage Schottky Rectifiers • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency i |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • High frequency operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliabilit |
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Vishay |
High Performance Schottky Rectifier • 150 °C TJ operation • TO-220 and D2PAK packages • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-2 |
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Vishay Siliconix |
Dual Common Cathode High Voltage Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 2 |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for def |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For |
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Vishay |
High Voltage Dual Schottky Rectifier • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Dual rectifier construction, positive center-tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, low |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263A |
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Desde 2024. D4U Semiconductor.
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