| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Vishay Intertechnology |
GaAlAs/GaAlAs Infrared Emitting Diode • High radiant power • High speed tr = 15 ns • High modulation band width fc = 23 MHz • • • • • • • • Peak wavelength λp = 870 nm High reliability Low forward voltage Suitable for high pulse current application Wide angle of half intensity Compatible |
|
Desde 2024. D4U Semiconductor.
|